Hitachi develops a GaN template for white LED epitaxy
By using this product as the underlying substrate of "white LED epitaxy", the production efficiency and LED characteristics of white LED epitaxy can be greatly improved. Therefore, for the white LED manufacturers with fierce competition in the industry, this product is expected to become a solution to effectively enhance the industrial status.
The number of white LED epitaxial growth is up to 1 or 2 times per day. How to achieve high-efficiency production has always been a difficult problem to be solved. To solve this problem, the company developed a GaN template for the underlying substrate grown by the MOVPE method.
The GaN template employs a structure in which an n-type GaN layer is grown on a sapphire substrate. By adopting the GaN model, LED manufacturers will no longer need the growth process of the n-type GaN buffer layer, and the time required for growth will be reduced to about half. In addition, the GaN model produced by the company can also achieve low resistance and high crystallinity at the same time, and is also suitable for high-power LEDs that require large currents.
Diode TVS (Transient Voltage Suppressor), also known as Transient suppression diodes, is widely used a new type of high efficient circuit protection device, it has a fast response time (the nanosecond) and high surge absorbing ability.When it ends of stand moments of high energy shock, TVS can bring the two ends at high rate from high impedance to a low impedance between impedance values, to absorb a large current moment, put it at both ends of the voltage restraint on a predetermined value, thus protecting the back of the circuit components are not affected by the impact of the transient high pressure spikes.
Silicon TVS / TSS
Silicon TVS Transient Voltage Suppresso,Silicon TSS Transient Voltage Suppresso
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